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4 edition of Excitons Bound to Impurities of 3d Elements in II-VI Compounds (Soviet Scientific Reviews Series, Section A) found in the catalog.

Excitons Bound to Impurities of 3d Elements in II-VI Compounds (Soviet Scientific Reviews Series, Section A)

V. I. Sokolov

Excitons Bound to Impurities of 3d Elements in II-VI Compounds (Soviet Scientific Reviews Series, Section A)

by V. I. Sokolov

  • 82 Want to read
  • 36 Currently reading

Published by Routledge .
Written in English

    Subjects:
  • Chemical spectroscopy, spectrochemistry,
  • Electricity, magnetism & electromagnetism,
  • Science / Physics

  • The Physical Object
    FormatPaperback
    Number of Pages146
    ID Numbers
    Open LibraryOL9078783M
    ISBN 103718649314
    ISBN 109783718649310
    OCLC/WorldCa256073029

    The mechanisms of transformation of the defect subsystem of II–VI single crystals upon microwave treatment are discussed. It is shown that the experimentally observed changes are defined by the nonthermal effects of microwave radiation at a power density of W cm{sup –2}; at 90 W cm{sup –2}, nonthermal effects are prevailing. A coordination complex consists of a central atom or ion, which is usually metallic and is called the coordination centre, and a surrounding array of bound molecules or ions, that are in turn known as ligands or complexing agents. Many metal-containing compounds, especially those of transition metals, are coordination complexes. A coordination complex whose centre is a metal atom is called a.

    Interaction of Excitons Bound to 3d Transition Metal Ions with Lattice Vibrations in II-VI Semiconductors V. Sokolov, T. Surkova Acta Physica Polonica A > > 79 > 1 > This is a treatise on important aspects of chemistry of coordination complexes (discussed in chapters 3 and 4) and of the related organometallic compounds (discussed in chapter 5) – their nature, bonding, structures, properties, reactions and applications covered systematically. Knowledge on the nature of chemical bond is essential for understanding the formation and properties of such.

    II-VI compounds are partly covalent and partly ionic in character, this can be seen in the valence charge density contours of GaAs compared to those of Si, both shown in Fig. 6. Other semiconductors, for example II-VI compounds such as ZnS, CdS, and CdSe adopt the wurtzite struc-ture, which is a hexagonal rather than cubic crystal sys-tem. / On the existence of impurity bound excitons in one-dimensional systems with zero range interactions. I: Journal of Mathematical Physics. ; B Nr. 5.


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Excitons Bound to Impurities of 3d Elements in II-VI Compounds (Soviet Scientific Reviews Series, Section A) by V. I. Sokolov Download PDF EPUB FB2

Earlier in Ni-doped II-VI compounds (for example, ZnSe:Ni, ZnO:Ni), p-d charge transfer excitons (or acceptor excitons) [d 9 h] were actively studied. In that case, the ninth electron was localized at the impurity center, and the hole was moving in the Coulomb field of a negatively charged center.

The square brackets also indicate the Author: V.I. Sokolov, V.N. Churmanov, V.A. Pustovarov, N.B. Gruzdev, M.A. Uimin, I.V. Byzov, A.F. Zatsepin. [23] V.I. Sokolov, K.A. Kikoin, Excitons bound to impurities of 3d elements in II-VI compounds, soviet scienti fi c reviews/section a, Physics 12 (3) () – The excitons intermediately bound to 3d impurities are similar in many aspects to those deeply bound to usual neutral impurities.

Both are characterized by multielectron impurity configurations [A. Excitons Bound to Impurities of 3D Elements in II-VI Compounds. Soviet Scientific Reviews, Fabrication and characterization of magnetron sputtered arsenic doped p-type ZnO epitaxial thin films.

The authors introduced a model relating the enhanced oscillator strengths of the bound excitons f BE to those of the free exciton f FE: (7) f BE = 8 π a BE 3 V f FE. In this model the oscillator strength of the bound excitons f BE is proportional to the Bohr radius a BE of the bound exciton and the volume V of a primitive elementar by: 9.

In semiconductors, many high-energy absorption lines are also due to the creation of excitons bound to defects whose electronic properties are only roughly understood, but these lines can bring useful information on the nature of these defects, for instance by their electronic isotope shifts or splitting under a uniaxial stress.

It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III–IV, II–VI and IV–VI compounds) and in several oxide compounds (TiO 2, BaTiO 3, SrTiO 3).

Also included are applications of the. The Table of Contents for the book is as follows: * Resonant Polaron Effect of Shallow Indium Donors in CdTe * Magnetic Resonance of Dopants and Defects in GaN-Based Materials and Devices * Some Aspects of the Hydrogen-Dopant Interactions in Compound Semiconductors * Shallow Electronic Traps Associated with Hydrogen Complexes in Crystalline Silicon * Shallow-Level Donor States of.

The short-lived PA2 spectral feature has been observed in different materials, such as II–VI QDs, and in perovskite materials, even in bulk or quantum-confined structures. This feature has been ascribed to the biexciton-induced Stark effect due to the shifting of the band-edge exciton absorption in the presence of the hot excitons created by.

We present exciton-related optical studies of cadmium sulfide (CdS) nanobelts. Photoluminescence (PL) properties of CdS nanobelts are analyzed by using high spectral resolution spectroscopy from 10 to K. The PL spectrum at 10 K shows rich spectral features which are identified, by means of temperature-dependent spectral evolution, to be the recombinations of free excitons, excitons bound.

photoluminescence zinc compounds II-VI semiconductors semiconductor quantum dots semiconductor quantum wells quantum optics excitons impurities microcavities ZnSe single quantum dots single impurities triggered single-photon photon pair emission nitrogen-bound excitons ZnSe quantum well structure Quantum dots US Department of Transportation.

On the other hand, another II–VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy.

This is. A Review of the Growth of 3D II-VI Compounds. Fitzpatrick. Excitons, Doping and Impurities in Wide Gap II-VI Semiconductors. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices.

The role and application of bound excitons in nanoscience and technology are discussed in this chapter. Bound excitons are well studied in semiconductors, especially in gallium phosphide doped by nitrogen (GaP:N) [3, 4, 7, 38, 40, 45]. Doping of GaP with N leads to isoelectronic substitution of the host P atoms by N in its crystal lattice and.

Carbon incorporation in ZnSe films grown by metalorganic chemical vapor deposition is reported. Secondary‐ion mass spectrometry measurements in ZnSe films grown from methylallylselenide and dimethylzinc show an enhanced carbon accumulation at the interface between ZnSe and GaAs.

The carbon incorporation in the bulk ZnSe increases with the VI/II ratio and for a value of VI/II=3–4, the. In the next step, these excitons can diffuse through the crystal and attach by exchange interaction to neutral shallow dopant impurities, forming excitons bound at donors (D0,X) or acceptors (A0,X).

Depending on the band structure, also binding to ionized impurity cores ((D+,X), (A-,X)) might be. bound electron-hole pairs (excitons). In addition, since the excitons are confined in a plane that is thinner than their Bohr radius in most 2D semiconductors, quantum confinement enhances the exciton binding energy, altering the wavelength of light they absorb and emit.

These two distinctively physical. Semiconducting compounds formed by combining an element from column II of the periodic Excitons, Doping and Impurities in Wide Gap II-VI Semiconductors --Some Aspects of Impurities in Wide Band II-VI Compounds --Conductivity Control of Wide Gap II A Review of the Growth of 3D II-VI Compounds -- The Growth of Thin Layers by.

Starting from the UV side of the spectra in Fig. 5, the narrow luminescence band observed near the fundamental band edge at around eV (label 1) originates from the radiative recombination of excitons bound to impurities, such as aluminum ( eV), which is omnipresent in ZnO, and gallium ( eV).

33 B. Transition metal impurities in III-V and II-VI semi- conductors occupy the substitutional sited, replacing the cation. Therefore, the impurity neutral charge state should correspond to oxidation state 3+ in the III-V hosts and 2+ in the II-VI hosts. In fact, Va3+ (with 2 d electrons) and Cu3+ (with 8 d electrons) or 2 holes in the d shell) can be.

The Dynamics of the Nitrogen Bound Excitons in Different SiC Polytypes. Luminescence and Electrical Properties of Mg x Zn 1-x Se Mixed Crystals. Disorder-Induced Raman Scattering in 70 Ge 1-x 76 Ge x Isotopic Alloys.

Fractional-Dimensional Electron Gas in GaAs with .ZnO is an II-VI compound semiconductor whose iconicity lies at the borderline between the covalent and ionic semiconductors. The crystal structures shared by ZnO are wurtzite (B4), zinc blende (B3) and rock salt (or Rochelle salt)(B1) as shown in figUnder atmosphere conditions, the thermodynamically stable phase is that of wurtzite symmetry.In this book, an introduction to the bulk optical properties of these materials and to the properties of hydrogen-like centers is first provided, followed by a description of set-ups used in absorption spectroscopy.

The results of the calculations of the energy levels of these centres by effective-mass theory are exposed.